in a BJT both the emitter and collector are n-type or p-type depending on the transistor type, so with that in consideration, is there an actual physical difference between the emitter and collector? and if so (which i am sure there is) what is that difference?
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Emitter is heavily doped so that it can inject a large number
of charge carriers into base .BASE is lightly doped and very thin.
It passes most of the injected charge carriers from emitter into collector.
Collector is moderately doped.This is the physical difference in emitter and collector
of charge carriers into base .BASE is lightly doped and very thin.
It passes most of the injected charge carriers from emitter into collector.
Collector is moderately doped.This is the physical difference in emitter and collector
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The collector is positioned in the package so that it is better able to dissipate the higher power that is dissipated in the C-B junction than than in the B-E junction.
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use an Ohm meter to determine current flows from emitter to collector so OL one direction and resistance the other way think of it as a diode.